IRF1404 seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 162 ? i d @ t c = 100c continuous drain current, v gs @ 10v 115 ? a i dm pulsed drain current ? 650 p d @t c = 25c power dissipation 200 w linear derating factor 1.3 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 519 mj i ar avalanche current ? 95 a e ar repetitive avalanche energy ? 20 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range -55 to + 175 soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 0.75 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 40v r ds(on) = 0.004 w i d = 162a ? l advanced process technology l ultra low on-resistance l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated description 10/20/00 1 to-220ab www.kersemi.com
IRF1404 2 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.036 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 0.0035 0.004 w v gs = 10v, i d = 95a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 106 CCC CCC s v ds = 25v, i d = 60a CCC CCC 20 a v ds = 40v, v gs = 0v CCC CCC 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 200 v gs = 20v gate-to-source reverse leakage CCC CCC -200 na v gs = -20v q g total gate charge CCC 160 200 i d = 95a q gs gate-to-source charge CCC 35 CCC nc v ds = 32v q gd gate-to-drain ("miller") charge CCC 42 60 v gs = 10v ? t d(on) turn-on delay time CCC 17 CCC v dd = 20v t r rise time CCC 140 CCC i d = 95a t d(off) turn-off delay time CCC 72 CCC r g = 2.5 w t f fall time CCC 26 CCC r d = 0.21 w ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 7360 CCC v gs = 0v c oss output capacitance CCC 1680 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 240 CCC ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 6630 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 1490 CCC v gs = 0v, v ds = 32v, ? = 1.0mhz c oss eff. effective output capacitance ? CCC 1540 CCC v gs = 0v, v ds = 0v to 32v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) ? i sd 95a, di/dt 150a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 0.12mh r g = 25 w , i as = 95a. (see figure 12) ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 95a, v gs = 0v ? t rr reverse recovery time CCC 71 110 ns t j = 25c, i f = 95a q rr reverse recoverycharge CCC 180 270 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 162 ? 650 a ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a www.kersemi.com
IRF1404 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 159a www.kersemi.com
IRF1404 4 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 95a v = 20v ds v = 32v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms www.kersemi.com
IRF1404 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 175 0 40 80 120 160 200 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.kersemi.com
IRF1404 6 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 0 20 40 60 80 100 i av , avalanche current ( a) 40 42 44 46 48 50 v dsav , avalanche voltage ( v ) 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 39a 67a 95a www.kersemi.com
IRF1404 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * www.kersemi.com
IRF1404 8 lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a www.kersemi.com
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